? AUIRFI4905 1 www.irf.com ? 2013 international rectifier september 11, 2013 base part number package type standard pack orderable part number ?? form quantity ? AUIRFI4905 to-220 full-pak tube 50 AUIRFI4905 hexfet? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the ther mal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperat ure (ta) is 25c, unless otherwise specified. automotive grade g d s gate drain source v dss -55v r ds(on) max. 20m ? i d (silicon limited) -39a features ?? advanced planar technology ?? p-channel mosfet ?? low on-resistance ?? dynamic dv/dt rating ?? 175c operating temperature ?? fast switching ?? fully avalanche rated ?? repetitive avalanche allowed up to tjmax ?? lead-free, rohs compliant ?? automotive qualified * parameter max. units i d @ t c (bottom) = 25c continuous drain current, v gs @ -10v (silicon limited) -39 a i d @ t c (bottom) = 100c continuous drain current, v gs @ -10v (silicon limited) -27 i dm pulsed drain current ? -155 p d @t c (bottom) = 25c power dissipation 55 w linear derating factor 0.37 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 1247 mj i ar avalanche current ? see fig. 14, 15, 22a, 22b a e ar repetitive avalanche energy ? t j operating junction and -55 to + 175 c ? t stg storage temperature range description specifically designed for automotive applications, this cellular design of hexfet ? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed an ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. to-220 full-pak ? g d s d hexfet ? power mosfet g d s ? thermal resistance symbol parameter typ. max. units r ? jc junction-to-case ? ??? 2.73 c/w r ? ja junction-to-ambient ??? 65 ?
? AUIRFI4905 2 www.irf.com ? 2013 international rectifier september 11, 2013 ? static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.049 ??? v/c reference to 25c, i d = -1.0ma r ds(on) static drain-to-source on-resistance ??? ??? 20 m ?? v gs = -10v, i d = -23a ? v gs(th) gate threshold voltage -2.0 ??? -4.0 v v ds = v gs , i d = -250a gfs forward transconductance 17 ??? ??? s v ds = -10v, i d = -23a i dss drain-to-source leakage current ??? ??? -25 a v ds = -55v, v gs = 0v ??? ??? -250 v ds = -44v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge ??? 110 165 nc i d = -23a q gs gate-to-source charge ??? 18 ??? v ds = -44v q gd gate-to-drain ("miller" ) charge ??? 51 ??? v gs = -10v ? t d(on) turn-on delay time ??? 14 ??? v dd = -55v t r rise time ??? 45 ??? ns i d = -23a t d(off) turn-off delay time ??? 71 ??? ? r g = 2.7 ? t f fall time ??? 61 ??? ? v gs = -10v ? l d internal drain inductance ??? 4.5 ??? ? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? ? from package ? and center of die contact c iss input capacitance ??? 3560 ??? pf v gs = 0v c oss output capacitance ??? 1290 ??? v ds = -25v c rss reverse transfer capacitance ??? 480 ??? ? = 1.0 mhz diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? -39 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? -155 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? -1.6 v t j = 25c, i s = -23a, v gs = 0v ? dv/dt peak diode recovery ? ??? 2.8 ??? v/ns t j = 175c, i s = -23a, v ds = -55v t rr ? reverse recovery time ??? 64 ??? ns t j = 25c, i f = -23a, v r = -28v q rr reverse recovery charge ??? 164 ??? nc di/dt = 100a/s ? g d s notes: ?? repetitive rating; pulse width limited by max. junction temperature. ?? limited by t jmax , starting t j = 25c, l = 4.7mh, r g = 50 ? , i as = -23a, v gs =-10v. ?? i sd ? -23a, di/dt ? 1026a/s, v dd ? v (br)dss , t j ? 150c. ?? pulse width ? 400s; duty cycle ? 2%. ?? r ? is measured at t j approximately 90c.
? AUIRFI4905 3 www.irf.com ? 2013 international rectifier september 11, 2013 0 1020304050607080 -i d ,drain-to-source current (a) 0 10 20 30 40 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = -5.0v fig. 2 typical output characteristics 0 2 4 6 8 10 12 -v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = -25v ? 60s pulse width 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v sd , source-to-drain voltage (v) 1.0 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v fig. 3 typical transfer characteristics 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v ? 60s pulse width tj = 25c -4.5v fig. 1 typical output characteristics fig. 6 normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -39a v gs = -10v fig. 4 typical forward transconductance vs drain current fig. 5 typical source-to-drain diode forward voltage 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -4.5v ? 60s pulse width tj = 175c vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v
? AUIRFI4905 4 www.irf.com ? 2013 international rectifier september 11, 2013 ? 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 10. maximum drain current vs. case temperature 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc fig 9. maximum safe operating area 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 7. typical capacitance vs. drain-to-source voltage 0 25 50 75 100 125 150 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -44v v ds = -28v v ds = -11v i d = -23a fig 8. typical gate charge vs. gate-to-source voltage fig 11. maximum effective transient thermal impedance, junction-to-case
? AUIRFI4905 5 www.irf.com ? 2013 international rectifier september 11, 2013 ? 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = -23a fig 14. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 15. maximum avalanche energy vs. temperature 25 50 75 100 125 150 starting t j , junction temperature (c) 0 1000 2000 3000 4000 5000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -8.8a -13a bottom -23a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 tav (sec) 0.1 1 10 100 - a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) fig 12. maximum avalanche energy vs. drain current -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250a id = -1.0ma id = -1.0a fig 13. threshold voltage vs. temperature
? AUIRFI4905 6 www.irf.com ? 2013 international rectifier september 11, 2013 ? fig 16. peak diode recovery dv/dt test circuit for p-channel hexfet? power mosfets fig 17a. unclamped inductive test circuit fig 17b. unclamped inductive waveforms fig 18a. switching time test circuit fig 18b. switching time waveforms fig 19a. gate charge test circuit fig 19b. gate charge waveform vdd ?
? AUIRFI4905 7 www.irf.com ? 2013 international rectifier september 11, 2013 ? to-220 full-pak package outline dimensions are shown in millimeters (inches) to-220 full-pak part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab full-pak packages are not reco mmended for surface mount application. ywwa xx ? xx date code y= year ww= work week AUIRFI4905 lot code part number ir logo
? AUIRFI4905 8 www.irf.com ? 2013 international rectifier september 11, 2013 ? ? qualification standards can be foun d at international rectifier?s web site: http//www.irf.com/ ?? highest passing voltage. qualification information ? ? qualification level automotive (per aec-q101) comments: this part number(s) pass ed automotive qualification. ir?s industrial and consumer qualification le vel is granted by extension of the higher automotive level. moisture sensitivity level to-220 full-pak n/a esd machine model class m4 (+/- 700v) ?? aec-q101-002 human body model class h2 (+/- 4000v) ?? aec-q101-001 charged device model class c5 (+/- 2000v) ?? aec-q101-005 rohs compliant yes to-220ab full-pak tube sketch
? AUIRFI4905 9 www.irf.com ? 2013 international rectifier september 11, 2013 ? important notice unless specifically designated for the automot ive market, international rectifier corpor ation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, impr ovements, and other changes to its products and services at any time and to disco ntinue any product or services without notice. part nu mbers designated with the ?au? prefix foll ow automotive industry and / or customer s pecific requirements with regards to product discont inuance and process change not ification. all products are sold subject to ir?s term s and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware produc ts to the specifications applicable at the time of sale in accordance with ir?s s tandard warranty. testing and other qua lity control techniques are used to the extent ir deems necessary to support this warranty. exc ept where mandated by government requirements, testing of all para meters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer produc ts and applications, customers should provide adequate design an d operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limit ations, and notices. reproduction of this information with alterations is an unfai r and deceptive business practice. ir is not responsible or liable for such al tered documentation. information of third parties may be subjec t to additional restrictions. resale of ir products or serviced with stat ements different from or beyond the paramet ers stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or au thorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could crea te a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized applicati on, buyer shall indemnify and hold international rectifier and its officers , employees, subsidiaries, affiliates, and distributors harmle ss against all claims, costs, damages, and expenses, and reasonable a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthoriz ed use, even if such claim alleges that ir was negligent regarding the design or m anufacture of the product. only products certified as military grade by the defense logisti cs agency (dla) of the us departm ent of defense, are designed a nd manufactured to meet dla militar y specifications required by certain military , aerospace or other applications. buyers acknowle dge and agree that any use of ir products not certified by dla as military-grad e, in applications requiring m ilitary grade products, is solel y at the buyer?s own risk and that they are solely responsible for compliance with a ll legal and regulatory requirements in connection with such use . ir products are neither designed nor intende d for use in automotive applic ations or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements an d bear a part number including the designation ?au?. buyers ack nowledge and agree that, if they use any non-designa ted products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105
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